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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD869 DESCRIPTION *With TO-3 package *Built-in damper diode *High voltage ,high speed *Low collector saturation voltage APPLICATIONS *For color TV horizontal output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IE PT Tj Tstg PARAMETER Collector-base voltage Collector-collector voltage Emitter-base voltage Collector current Emitter current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 3.5 -3.5 50 150 -65~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current DC current gain Diode forward voltage Transition frequency Collector output capacitance Fall time CONDITIONS IE=200m A;IC=0 IC=3 A;IB=0.8 A IC=3 A;IB=0.8 A VCB=500V;IE=0 IC=0.5A ; VCE=5V IF=3.5A IC=0.1A ; VCE=10V IE=0 ; VCB=10V;f=1MHz IC=3A;IB1end=0.8A 3 8 MIN 5 2SD869 SYMBOL V(BR)EBO VCEsat VBEsat ICBO hFE VF fT COB tf TYP. MAX UNIT V 8.0 1.5 10 V V A 2.0 V MHz pF 95 1.0 s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD869 Fig.2 Outline dimensions 3 |
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